M. Sedlar et M. Sayer, STRUCTURAL AND ELECTRICAL-PROPERTIES OF FERROELECTRIC BISMUTH TITANATE THIN-FILMS PREPARED BY THE SOL-GEL METHOD, Ceramics international, 22(3), 1996, pp. 241-247
Crystalline bismuth titanate films were fabricated using a modified so
l gel method. The process was simplified using stock titanium and bism
uth solutions. Films were fabricated using rapid thermal processing wi
th a ramp rate of 100 degrees C/s to 700 degrees C for 30 s. The avera
ge grain size of films was 175 nm. A dielectric constant in the typica
l range of 220 and tan delta of 0.01 were measured. P-E hysteresis loo
ps were observed with the ferroelectric properties of P-s = 22 mu C/cm
(2), P-r = 10 mu C/cm(2) and the coercive force E(c) = 165 kV/cm. The
leakage current density was of the order of 10 nA/cm(2) at 60 kV/cm. A
n almost flat C-V characteristic and a charge storage density of 42 fC
/mu m(2) at 220 kV/cm were measured.