EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS

In this paper we report a careful analysis of how the composition of a lpha-SIC:H films with optical gap from 2.1 to 2.6 eV deposited by PECV D in SiH4 + CH4 gas mixtures are affected by variations of the molecul e dwell time and of the effective dissipated power. We show that varia tions in the effective dissipated power(from 1.69 to 4.53 W) and in th e dwell time (from 0.067 to Is) do not change the optoelectronic prope rties, whose dependence on the optical gap is typical of high electron ic quality-films deposited in the lower power regime and, also, that t hese variations lead only to different carbon incorporations in the gr owing films, without affecting the growth mechanism and the film struc ture.