Selective deposition of thin nickel films on p-type silicon was obtain
ed in a hydrazine-based conventional electroless nickel plating soluti
on at the ambient temperature under laser irradiation, Composition and
properties of the deposits were investigated using SEM, AES and RES t
echniques, The deposits are in Schottky barrier contact with p-type si
licon, The mechanism involved in the deposition process was also discu
ssed.