LASER-INDUCED SELECTIVE DEPOSITION OF NIC KEL ON P-TYPE SILICON

Authors
Citation
J. Wang et al., LASER-INDUCED SELECTIVE DEPOSITION OF NIC KEL ON P-TYPE SILICON, Gaodeng xuexiao huaxue xuebao, 17(4), 1996, pp. 626-629
Citations number
7
Categorie Soggetti
Chemistry
ISSN journal
02510790
Volume
17
Issue
4
Year of publication
1996
Pages
626 - 629
Database
ISI
SICI code
0251-0790(1996)17:4<626:LSDONK>2.0.ZU;2-R
Abstract
Selective deposition of thin nickel films on p-type silicon was obtain ed in a hydrazine-based conventional electroless nickel plating soluti on at the ambient temperature under laser irradiation, Composition and properties of the deposits were investigated using SEM, AES and RES t echniques, The deposits are in Schottky barrier contact with p-type si licon, The mechanism involved in the deposition process was also discu ssed.