A donor-related resonance is observed in double-barrier resonant tunne
ling devices with Si donors incorporated in the quantum well. In high
magnetic fields the resonance becomes dominant over the Is resonance a
ssociated with the ground state of a single donor. The bias position o
f the donor resonance, its magnetic field dependence, and large amplit
ude indicate unambiguously that the resonance is due to tunneling thro
ugh the ground state of a shallow donor with two bound electrons (D- l
evel).