PHOTOLUMINESCENCE OF THE 2-DIMENSIONAL HOLE GAS IN P-TYPE DELTA-DOPEDSI LAYERS

The radiative recombination processes related to the boron-delta-dopin g of Si layers are studied by means of photoluminescence (PL) spectros copy. New broad asymmetric PL bands below the band edge excitonic emis sions are shown to be characteristic for p-type modulation doping. By studying the dependence of the PL properties on structure parameters, such as doping level and growth temperature, and on the experimental c onditions the mechanisms of the radiative recombination are analyzed. The PL revealed is argued to be related to the recombination between t he two-dimensional hole gas confined in the doping-induced notch poten tial and photocreated electrons.