BAND-STRUCTURE OF HOLES IN P-TYPE DELTA-DOPING QUANTUM-WELLS AND SUPERLATTICES

p-type delta-doping quantum wells and superlattices are semiconductor systems of considerable interest for basic research and device applica tions. in this paper, a method for calculating potentials and band str uctures of such systems is developed. The method relies on a plane-wav e expansion of the multiband effective-mass equation, uses kinetic ene rgy matrices of any size, and takes exchange correlation into account in a more rigorous way than this was done before. The method is used t o calculate potential profiles, subband and miniband structures, as we ll as Fermi level positions for a series of p-type delta-doping quantu m wells and superlattices. Exchange-correlation effects turn out to be rather large. Only if they are properly taken into account reasonable agreement with experimental photoluminescence data can be achieved. F or comparison, potentials and energy levels are also calculated for el ectrons of n-type delta-doping systems. The potential wells for electr ons are considerably deeper and wider, and exchange-correlation effect s are less pronounced than for holes. The physical reasons for these d ifferences and their implications on luminescence spectra from n- and p-type delta-doping structures are discussed.