Gm. Sipahi et al., BAND-STRUCTURE OF HOLES IN P-TYPE DELTA-DOPING QUANTUM-WELLS AND SUPERLATTICES, Physical review. B, Condensed matter, 53(15), 1996, pp. 9930-9942
p-type delta-doping quantum wells and superlattices are semiconductor
systems of considerable interest for basic research and device applica
tions. in this paper, a method for calculating potentials and band str
uctures of such systems is developed. The method relies on a plane-wav
e expansion of the multiband effective-mass equation, uses kinetic ene
rgy matrices of any size, and takes exchange correlation into account
in a more rigorous way than this was done before. The method is used t
o calculate potential profiles, subband and miniband structures, as we
ll as Fermi level positions for a series of p-type delta-doping quantu
m wells and superlattices. Exchange-correlation effects turn out to be
rather large. Only if they are properly taken into account reasonable
agreement with experimental photoluminescence data can be achieved. F
or comparison, potentials and energy levels are also calculated for el
ectrons of n-type delta-doping systems. The potential wells for electr
ons are considerably deeper and wider, and exchange-correlation effect
s are less pronounced than for holes. The physical reasons for these d
ifferences and their implications on luminescence spectra from n- and
p-type delta-doping structures are discussed.