ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC

Elevated temperature (700 degrees C)N ion implantations were performed into 6H-SiC in the energy range of 50 keV-4 MeV. By analyzing the as- implanted depth distributions, the range statistics of the N+ in 6H-Si C have been established over this energy range. Annealing at 1500 and 1600 degrees C for 15 min resulted in Rutherford backscattering spectr ometry scattering yields at the virgin crystal level, indicating a goo d recovery of the crystalline quality of the material without any redi stribution of the dopant. A maximum electron concentration of 2 x 10(1 9) cm(-3), at room temperature, has been measured even for high-dose i mplants. The p-n junction diodes made by N ion implantation into a p-t ype substrate have a forward turn-on voltage of 2.2 V, an ideality fac tor of 1.90, and a reverse breakdown voltage of 125 V with nA range le akage current for -10 V bias at room temperature. By probing many devi ces on the same substrate we found uniform forward and reverse charact eristics across the crystal.