HIGH-QUALITY INP ON SI BY CONFORMAL GROWTH

Conformal growth is a confined epitaxial lateral overgrowth technique previously used to achieve low dislocation density GaAs films on Si. C onformal growth was used here to obtain high quality InP films on sili con, starting from GaAs seeds. Detailed characterization of the InP fi lms (chemical etching of dislocations, photoluminescence at 300 K, cro ss-section transmission electron microscopy) proved the high defect fi ltering power of this technique. Dislocations initially present in the GaAs seeds and dislocations generated at the InP/GaAs interface were blocked and did not propagate through the growing films. Dislocations densities below 5X10(5) cm(-2) have been obtained in submicrometer-thi ck conformal InP films on Si. (C) 1996 American Institute of Physics.