GROWTH DEFECTS IN GAN FILMS ON 6H-SIC SUBSTRATES

Lattice defects in GaN epilayers grown on 6H-SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission e lectron microscopy (TEM). The predominant defects in the film were thr eading dislocations and half-loops with Burgers vectors 1/3[11(2) over bar 0], [0001], and 1/3[11(2) over bar 3]. Planar faults were also ob served in the film that are thought to be inversion domain boundaries (IDBs). (C) 1996 American Institute of Physics.