PERMANENT SPECTRAL HOLE-BURNING IN SEMICONDUCTOR QUANTUM DOTS

Citation
Sv. Gaponenko et al., PERMANENT SPECTRAL HOLE-BURNING IN SEMICONDUCTOR QUANTUM DOTS, Journal of applied physics, 79(9), 1996, pp. 7139-7142
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
9
Year of publication
1996
Pages
7139 - 7142
Database
ISI
SICI code
0021-8979(1996)79:9<7139:PSHISQ>2.0.ZU;2-#
Abstract
Permanent spectral hole-burning under prolonged laser illumination was found in an ensemble of CdS quantum dots of a size less than the exci ton Bohr radius embedded in a polymer film. The effect is attributed t o a two-stage process stimulated by resonant optical excitation. At th e first stage selective photoionization of the crystallites gives rise to a broadening of the relevant components in the integral absorption spectrum due to the local electric field effect. At the second stage a continuous photolytic process occurs providing an irreversible destr uction of the crystallites and a characteristic dip in the absorption spectrum. In addition to various other techniques the observed phenome non is an effective complementary tool for the analysis of quantum dot ensembles with an inhomogeneously broadened spectrum. (C) 1996 Americ an Institute of Physics.