WANNIER-STARK LOCALIZATION IN A STRAINED-LAYER INXGA1-XAS INYGA1-YP SUPERLATTICE/

Authors
KIM JW LEE YJ VOGT TJ PATRIZI GA ROBINSON GY LILE DL
Citation
Jw. Kim et al., WANNIER-STARK LOCALIZATION IN A STRAINED-LAYER INXGA1-XAS INYGA1-YP SUPERLATTICE/, Journal of applied physics, 79(9), 1996, pp. 7161-7163
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
9
Year of publication
1996
Pages
7161 - 7163
Database
ISI
SICI code
0021-8979(1996)79:9<7161:WLIASI>2.0.ZU;2-M
Abstract
We present an observation of the Wannier-Stark effect in a strained In GaAs/InGaP superlattice grown on a GaAs substrate. A blueshift of the effective absorption edge is observed in room and low-temperature phot ocurrent and transmission measurements. A similar to 2000 cm(-1) absor ption change due to the transition of the absorption edge from a broad to a sharp quantum well-like excitonic shape was obtained for as litt le as a 2 V change in bias voltage. (C) 1996 American Institute of Phy sics.