GAS-PHASE COMPOSITION MEASUREMENTS DURING CHLORINE ASSISTED CHEMICAL-VAPOR-DEPOSITION OF DIAMOND - A MOLECULAR-BEAM MASS-SPECTROMETRIC STUDY

Citation
Ca. Rego et al., GAS-PHASE COMPOSITION MEASUREMENTS DURING CHLORINE ASSISTED CHEMICAL-VAPOR-DEPOSITION OF DIAMOND - A MOLECULAR-BEAM MASS-SPECTROMETRIC STUDY, Journal of applied physics, 79(9), 1996, pp. 7264-7273
Citations number
37
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
9
Year of publication
1996
Pages
7264 - 7273
Database
ISI
SICI code
0021-8979(1996)79:9<7264:GCMDCA>2.0.ZU;2-E
Abstract
We have constructed a molecular beam mass spectrometer designed specif ically to sample gases from a diamond chemical vapor deposition (CVD) process chamber thereby enabling characterization of the gas-phase CVD environment. With this in situ diagnostic technique we have obtained quantitative measurements of the composition of the gas-phase species as a function of filament temperature for a variety of C/H/Cl gas mixt ures. The precursor mixtures used were 1% of a chloromethane (CH4-nCln , n=1-4) in hydrogen and 1% CH4 in hydrogen with added Cl-2 varying fr om 1% to 4%. At filament temperatures optimum for diamond growth (simi lar to 2300 degrees C) the relative CH4/C2H2/C2H4 product distribution measured in the gas mixture is remarkably similar to that established when CH4 is the carbon precursor species. At these filament temperatu res almost all the chlorine is reduced to HCl, its concentration being proportional to the Cl fraction in the source gas, regardless of the form of the chlorine in the source gas mixture. Compositional analysis of the as-grown diamond films indicated that no chlorine was present in the bulk of the films, though trace amounts of chlorine were detect ed on the film surface. From these observations we surmise that chlori ne atoms are involved in the gas-surface reactions which produce activ e growth th sites on the diamond surface. (C) 1996 American Institute of Physics.