JUNCTION SHARPNESS IN FIELD-INDUCED TRANSISTOR STRUCTURES IN CUXAG1-XINSE2

We have measured the widths of the transition regions at p-n-p junctio ns that are formed on CuxAg1-xInSe2 by high electric field at room tem perature, by using a scanning tunneling microscope with capacity for m easuring current-voltage curves on physical contact. We find marked tr ansition regions of low conductivity with widths in the range of 1.3-5 mu m. This shows that the junction created by the electromigration me chanism in this material, while diffuse by the standards of those prod uced by high-temperature or high-energy methods, are remarkably sharp by solid-state ionic measures. (C) 1996 American Institute of Physics.