ELECTRIC-FIELD EFFECTS ON THE PHOTODETACHMENT OF H- BELOW THE N=3 THRESHOLD

Authors
Citation
H. Bachau et F. Martin, ELECTRIC-FIELD EFFECTS ON THE PHOTODETACHMENT OF H- BELOW THE N=3 THRESHOLD, Journal of physics. B, Atomic molecular and optical physics, 29(8), 1996, pp. 1451-1466
Citations number
28
Categorie Soggetti
Physics, Atomic, Molecular & Chemical",Optics
ISSN journal
09534075
Volume
29
Issue
8
Year of publication
1996
Pages
1451 - 1466
Database
ISI
SICI code
0953-4075(1996)29:8<1451:EEOTPO>2.0.ZU;2-W
Abstract
We have implemented an L(2) integrable method with B-spline Oasis whic h allows us to calculate photodetachment cross sections of the H- ion in the presence of a constant electric field. The behaviour of the Fes hbach resonances lying below the N = 2 and N = 3 thresholds is analyse d in detail. Further insight on the relative importance of autoionizat ion and tunnelling is provided by using a stabilization procedure. Our results permit us to explain most of the experimental findings and sh ow the existence of resonance structures previously unobserved.