EVIDENCE FOR VIRTUAL-PHONON EXCHANGE IN SEMICONDUCTOR HETEROSTRUCTURES

Citation
Tj. Gramila et al., EVIDENCE FOR VIRTUAL-PHONON EXCHANGE IN SEMICONDUCTOR HETEROSTRUCTURES, Physical review. B, Condensed matter, 47(19), 1993, pp. 12957-12960
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
47
Issue
19
Year of publication
1993
Pages
12957 - 12960
Database
ISI
SICI code
0163-1829(1993)47:19<12957:EFVEIS>2.0.ZU;2-8
Abstract
Measurements of frictional drag between adjacent electron gases in dou ble quantum wells provide strong evidence for phonon-mediated electron -electron interactions. These interactions, which dominate the contrib ution from simple Coulomb scattering at layer spacings larger than a f ew hundred angstrom, are between 20 and 100 times stronger than expect ed for sequential emission and absorption of real phonons. The observe d range of the interactions, substantially smaller than the acoustic p honon mean free path, points to an electron scattering mechanism invol ving virtual-phonon exchange.