SINGLE PARTICLE-INDUCED LATCHUP

This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short descriptio n of the effects induced by the interaction of a heavy ion with silico n. Understanding these effects is necessary to understand the differen t failures. This paper includes a description of the latchup phenomeno n and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approac hes.