EXPERIMENTAL STUDIES OF SINGLE-EVENT GATE RUPTURE AND BURNOUT IN VERTICAL POWER MOSFETS

Authors
TITUS JL WHEATLEY CF
Citation
Jl. Titus et Cf. Wheatley, EXPERIMENTAL STUDIES OF SINGLE-EVENT GATE RUPTURE AND BURNOUT IN VERTICAL POWER MOSFETS, IEEE transactions on nuclear science, 43(2), 1996, pp. 533-545
Citations number
47
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
2
Year of publication
1996
Part
1
Pages
533 - 545
Database
ISI
SICI code
0018-9499(1996)43:2<533:ESOSGR>2.0.ZU;2-P
Abstract
Numerous studies have revealed that vertical power MOSFET's are suscep tible to single-event burnout (SEB) and single-event gate rupture (SEG R), resulting in degraded performance or even catastrophic failure whe n operated in a cosmic-ray environment like space. This paper summariz es many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable inform ation on SEGR is also provided.