A REVIEW OF THE TECHNIQUES USED FOR MODELING SINGLE-EVENT EFFECTS IN POWER MOSFETS

Citation
Gh. Johnson et al., A REVIEW OF THE TECHNIQUES USED FOR MODELING SINGLE-EVENT EFFECTS IN POWER MOSFETS, IEEE transactions on nuclear science, 43(2), 1996, pp. 546-560
Citations number
41
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
43
Issue
2
Year of publication
1996
Part
1
Pages
546 - 560
Database
ISI
SICI code
0018-9499(1996)43:2<546:AROTTU>2.0.ZU;2-1
Abstract
Heavy ions can trigger catastrophic failure modes in power metal-oxide -semiconductor field-effect transistors (MOSFET's). Single-event effec ts (SEE), namely, single-event burnout (SEE), and single-event gate ru pture (SEGR), of power MOSFET's are catastrophic failure mechanisms th at are initiated by the passage of a heavy ion through the device stru cture. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. This paper presents a review of these models and explains their merits and limitations. New results are included to illustrate the approaches.