Gh. Johnson et al., A REVIEW OF THE TECHNIQUES USED FOR MODELING SINGLE-EVENT EFFECTS IN POWER MOSFETS, IEEE transactions on nuclear science, 43(2), 1996, pp. 546-560
Heavy ions can trigger catastrophic failure modes in power metal-oxide
-semiconductor field-effect transistors (MOSFET's). Single-event effec
ts (SEE), namely, single-event burnout (SEE), and single-event gate ru
pture (SEGR), of power MOSFET's are catastrophic failure mechanisms th
at are initiated by the passage of a heavy ion through the device stru
cture. Various analytical, semianalytical, and simulation models have
been developed to help explain these phenomena. This paper presents a
review of these models and explains their merits and limitations. New
results are included to illustrate the approaches.