PROTON EFFECTS IN CHARGE-COUPLED-DEVICES

Basic mechanisms and ground-test data for radiation effects in solid-s tate imagers are reviewed, with a special emphasis on proton-induced e ffects on silicon charge-coupled devices (CCD's). For the proton fluxe s encountered in the space environment, both transient ionization and displacement damage effects arise from single-particle interactions. I n the former case, individual proton tracks will be seen; in the latte r, dark-current spikes (or hot pixels) and trapping states that cause degradation in charge-transfer efficiency will be observed. Proton-ind uced displacement damage effects on dark current and charge transfer a re considered in detail, and the practical implications for shielding, device hardening, and ground testing are discussed.