SOFT ERROR SUSCEPTIBILITY AND IMMUNE STRUCTURES IN DYNAMIC RANDOM-ACCESS MEMORIES (DRAMS) INVESTIGATED BY NUCLEAR MICROPROBES

Authors
TAKAI M KISHIMOTO T OHNO Y SAYAMA H SONODA K SATOH S NISHIMURA T MIYOSHI H KINOMURA A HORINO Y FUJII K
Citation
M. Takai et al., SOFT ERROR SUSCEPTIBILITY AND IMMUNE STRUCTURES IN DYNAMIC RANDOM-ACCESS MEMORIES (DRAMS) INVESTIGATED BY NUCLEAR MICROPROBES, IEEE transactions on nuclear science, 43(2), 1996, pp. 696-704
Citations number
36
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
2
Year of publication
1996
Part
1
Pages
696 - 704
Database
ISI
SICI code
0018-9499(1996)43:2<696:SESAIS>2.0.ZU;2-2
Abstract
Soft error susceptibility mapping and ion-beam-induced-current (IBIC) measurements using a nuclear microprobe allow a quantitative evaluatio n of the charge collection which induces upset in dynamic random acces s memories (DRAM's). Soft error susceptibility in DRAM's as a function of local position and structure has been reviewed. Charge collection efficiency induced by incident ions on reversebiased n(+) p junctions with various barrier web structures has been compared with that with a conventional well in a p(-) epitaxial layer on a p(+) substrate.