ADSORPTION OF POTASSIUM ON THE SI(111)ROOT-3X-ROOT-3R30-DEGREES - B-SURFACE - OBSERVATION OF AN INSULATING SURFACE AT SUBMONOLAYER COVERAGE

Authors
GREHK TM JOHANSSON LSO KARLSSON UO FLODSTROM AS
Citation
Tm. Grehk et al., ADSORPTION OF POTASSIUM ON THE SI(111)ROOT-3X-ROOT-3R30-DEGREES - B-SURFACE - OBSERVATION OF AN INSULATING SURFACE AT SUBMONOLAYER COVERAGE, Physical review. B, Condensed matter, 47(20), 1993, pp. 13887-13890
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
20
Year of publication
1993
Pages
13887 - 13890
Database
ISI
SICI code
0163-1829(1993)47:20<13887:AOPOTS>2.0.ZU;2-J
Abstract
The Si(111) square-root 3 X square-root 3R 30-degrees:B surface with s ubmonolayer coverages of potassium has been studied with angle-resolve d photoelectron spectroscopy. Deposition of potassium leads to the for mation of a state 0.7 eV below the Fermi level. The energy position of this state showed only a minor dependence on the actual potassium cov erage and the state displayed a small dispersion of 0.1 eV when probed along the GAMMABAR-MBAR' direction in the square-root 3 X square-root 3R 30-degrees-surface Brillouin zone. These results support the idea that a mainly covalent bonding exists between the potassium atoms and the Si surface.