EVIDENCE FOR EXISTENCE OF HYDROGEN-RELATED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON

Authors
YOKOMICHI H MORIGAKI K
Citation
H. Yokomichi et K. Morigaki, EVIDENCE FOR EXISTENCE OF HYDROGEN-RELATED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON, Philosophical magazine letters, 73(5), 1996, pp. 283-287
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Philosophical magazine letters → ACNP
ISSN journal
09500839
Volume
73
Issue
5
Year of publication
1996
Pages
283 - 287
Database
ISI
SICI code
0950-0839(1996)73:5<283:EFEOHD>2.0.ZU;2-Q
Abstract
We have observed an electron-nuclear double resonance signal due to th e D-2 nucleus in sputtered deuterated amorphous Si (a-Si:D). The frequ ency of the signal is consistent with that estimated from the hyperfin e interaction constant of a dangling bond with a H-1 nucleus in hydrog enated amorphous Si (a-Si:H). This result provides further evidence fo r the existence of H-related (D-related) dangling bonds, that is dangl ing bonds having H(D) at a nearby site, in a-Si:H (a-Si:D) containing a large amount of H (D).