BISETHYLACETOACETATO CU(II) AS A NOVEL METAL-ORGANIC PRECURSOR FOR CUFILM PRODUCTION BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TOWARD ULTRA-LARGE-SCALE INTEGRATION METALLIZATION

Bisethylacetoacetato Cu(II), referred to as Cu(etac)(2), was synthesiz ed and used as a novel metal-organic precursor to produce Cu films by PECVD processing. Cu(etac)(2) is a nonfluoride compound that is solid at room temperature with reasonable volatility at 120-150 degrees C of 0.8 Torr. Effects of selected process variables on the characteristic s of Cu film deposition were studied. Considered variables were plasma power, hydrogen Bow rate, deposition time, substrate temperature, and precursor temperature. The process conditions to give Cu films of a h igh quality were determined. The electrical resistivity approached 2 m u Omega . cm as the Cu film thickness became greater than 2500 Angstro m. The conformality of the Cu film deposition by PECVD was sufficient to result in complete via-hole fillings of wafers patterned for 256 Mb DRAM.