Rs. Mishra et al., EFFECT OF TIO2 DOPING ON RAPID DENSIFICATION OF ALUMINA BY PLASMA ACTIVATED SINTERING, Journal of materials research, 11(5), 1996, pp. 1144-1148
The effects of plasma cycle and TiO2 doping on sintering kinetics duri
ng plasma activated sintering (PAS) of gamma-Al2O3 have been studied i
n the temperature range of 1473-1823 K. Multiple plasma cycle leads to
higher densification. Also, TiO2 doping enhances the sintering kineti
cs during PAS, In TiO2 doped specimens, near full density was obtained
at 1673 K in less than 6 min using multiple plasma cycle. It is sugge
sted that the dielectric properties of a material are critical for the
success of the PAS process.