CHEMICAL-VAPOR-DEPOSITION OF ALPHA-ZRP WHISKERS

alpha-ZrP whiskers have been prepared from ZrCl4 + PCl3 + H-2 + Ar gas mixtures at 1050-1250 degrees C using the mixed metal impurity-activa ted chemical vapor deposition process. The growth conditions, morpholo gy, growth mechanism, and some properties were examined. The mixed imp urities of Si + Pt and Si + Pd were very effective for the ZrP whisker growth with 8-12 mm (avg. 10 mm) long whiskers being obtained at 1300 degrees C for 1 h. The growth direction of the whiskers having hexago nal and square cross sections were along the c-axis and a-axis, respec tively. The whiskers were very stable to an 80 min immersion in a conc entrated HCl solution.