X-RAY-INVESTIGATION OF THE ELECTRON-STRUCTURE OF ORGANIC-COMPOUNDS CONTAINING SIS AND SIO BONDS

S Kalpha, S Kbeta fluorescence and O Kalpha emission spectra of some o rganic compounds containing SiS and SiO bonds have been obtained. The presence of n(S)-sigma(SiC) and n(S)-sigma*(SiO) interactions has bee n detected in compounds containing SiS bonds. These interactions lead to SiS bond stabilization. It is shown that there are n(O)-sigma(SiC) and n(O)-sigma(SiC) interactions in compounds containing SiO bonds. A quantitative estimation of the HOMO bonding degree has been made for the compounds investigated. It is shown that stabilization of the SiS bond due to geminal conjugations exceeds considerably that of the SiO bond. The electron density of the sulphur atom increases with the grow th of pi-acceptor and sigma-donor abilities of substituents at the sul phur atom.