OPTOELECTRONIC PROPERTIES OF CUINSE2 GROWN BY TRAVELING HEATER METHODUSING CU-IN ALLOY SOLVENT

The CuInSe2(CIS) crystals were grown by traveling heater method(THM) u sing Cu-40 at%In alloy as the solvent metal. The composition mapping b y electron probe microscopic analysis was stoichiometric and homogeneo us throughout the crystal. The conduction was p-type with the carrier concentration and hole mobility in the order of magnitude of 10(20)-10 (22) m(3) and 10(-3) m(2)Vs(-1) at 300 K, respectively. The emission p eaks in the photoluminescence spectra were identified as the free exci ton and the defects of Se vacancy(V-Se) and Cu antisite(Cu on In site, Cu-In). From the emission intensity measurement, it was found that th e nonradiative recombination centers decreased in the direction from t he bottom to the top end of the crystal, while the defects of V-Se and Cu-In remained almost uniform. The results indicate that the quality of the CIS crystal enhanced by the THM growth in comparison to that of the crystal by the Bridgman method in which non-radiative recombinati on centers were predominant.