DIELECTRIC-PROPERTIES OF DYSPROSIUM FLUORIDE THIN-FILMS

Authors
REDDY BJM JYOTHI GP REDDY MVR CHARY MN REDDY KN
Citation
Bjm. Reddy et al., DIELECTRIC-PROPERTIES OF DYSPROSIUM FLUORIDE THIN-FILMS, Physica status solidi. a, Applied research, 137(1), 1993, pp. 241-246
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
137
Issue
1
Year of publication
1993
Pages
241 - 246
Database
ISI
SICI code
0031-8965(1993)137:1<241:DODFT>2.0.ZU;2-0
Abstract
Amorphous Al DyF3-Al thin films are prepared using vacuum evaporation at a pressure of 2.666 x 10(-3) Pa. The film thickness is measured usi ng Tolansky's multiple beam interferometry technique. The effect of te mperature (300 to 408 K) and frequency (1 to 71 kHz) on capacitance an d loss tangent of these films is studied and the results are discussed . Temperature coefficient of capacitance (TCC) and breakdown field str ength for a particular film are estimated. The conduction mechanism in these films is explained basing on the value of activation energy.