MULTISTABILITY IN GRATING-TUNED EXTERNAL-CAVITY SEMICONDUCTOR-LASERS

Citation
C. Yan et al., MULTISTABILITY IN GRATING-TUNED EXTERNAL-CAVITY SEMICONDUCTOR-LASERS, IEEE journal of quantum electronics, 32(5), 1996, pp. 813-821
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
32
Issue
5
Year of publication
1996
Pages
813 - 821
Database
ISI
SICI code
0018-9197(1996)32:5<813:MIGES>2.0.ZU;2-8
Abstract
In this paper, we discuss the multistable state in a semiconductor las er that has an external-cavity grating system for the first time (to t he best of our knowledge). We analyzed onset conditions and stable sol ution conditions of the multistability and bistability, and observed o pen- and closed-loop multistabilities. The properties of the multistab le loops depend upon whether the internal facet reflectivity of the la ser diode is larger or smaller than the external grating cavity reflec tivity. This phenomenon directly reflects the intrinsic properties of the coherent interactions between the internal facet and the external grating cavity in the semiconductor laser diode, We experimentally obs erved the optical pulse-width memory effect in the external grating-tu ned semiconductor lasers, Based upon this setup and results, a multist able optical logic device can be built with a carefully designed compo und cavity semiconductor laser device.