ANISOTROPY AND SPIN-RESONANCE IN CUBIC AND WURTZITE STRUCTURE SEMICONDUCTORS

A theory is presented which permits the determination of the integrate d absorption coefficient corresponding to tile electric spin resonance for electrons bound to donors in cubic and wurtzite-type semiconducto rs. The anisotropy effect of the effective Bohr radius is included in the determining of this coefficient. The results of the theory are com pared with relevant data on Cd0.9Mn0.1Se. The fit of theory to the exp erimental results yields values for the strength lambda of the spin-or bit interaction equal to 2.40 x 10(-10) eV cm, the transverse Bohr rad ius alpha(t) = 43.5 Angstrom, and the anisotropy parameter epsilon = alpha(t)/alpha(1)* = 0.998.