ELECTRICAL DISLOCATION RESISTIVITY AND ANISOTROPIC SCATTERING IN HIGH-PURITY COPPER SINGLE-CRYSTALS

The experimental dislocation resistivity (or the deviation from Matthi essen's rule (DMR)) at 4.2 and 77 K of several single slip and multisl ip crystals was investigated. Additionally low-field Hall effect measu rements at 4.2 K using a dc SQUID picovoltmeter were performed in orde r to study the anisotropy of electron-dislocation and electron-impurit y scattering directly. It is shown that oxygen annealing applied to in crease the ''electrical purity'' of the crystals does not change the c haracter of the scattering behaviour. The anisotropy parameters A(dis) for electron-dislocation scattering derived within the two-group mode l are in good agreement with recent results for high-purity polycrysta ls.