COLLISIONAL BROADENING EFFECT IN VACUUM EMISSION OF HOT-ELECTRONS FROM SIO2 - THE ROLE OF NONPOLAR OPTICAL PHONON-SCATTERING

Authors
REGGIANI L FITTING HJ HINGST T KOHN J BEAUVIVRE S VARANI L
Citation
L. Reggiani et al., COLLISIONAL BROADENING EFFECT IN VACUUM EMISSION OF HOT-ELECTRONS FROM SIO2 - THE ROLE OF NONPOLAR OPTICAL PHONON-SCATTERING, Physica status solidi. b, Basic research, 194(2), 1996, pp. 667-671
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
194
Issue
2
Year of publication
1996
Pages
667 - 671
Database
ISI
SICI code
0370-1972(1996)194:2<667:CBEIVE>2.0.ZU;2-2
Abstract
The energy distribution function of hot electrons emitted from a 13 nm SiO2 layer is measured through vacuum emission experiments up to a eV . The results evidence the presence of carriers in an energy region we ll above tile ballistic threshold. A Monte Carlo simulation of carrier transport in the presence of non-polar scattering and collisional bro adening is in qualitative agreement with tile experiments thus providi ng a value of 3.1 x 10(9) eV/cm for the deformation potential and a di rect indication of collisional broadening effect in high-field transpo rt of electrons in SiO2.