(Bi1-xSbx)(2)Se-3 (x = 0 to 0.2) single crystals prepared from element
s of 5N purity by means of a modified Bridgman method were characteriz
ed by measurements of infrared reflectance and transmittance. Values o
f the plasma resonance frequency omega(p), optical relaxation time tau
, and high-frequency permittivity epsilon(proportional to) were determ
ined by fitting the reflectance spectra. It was found that the substit
ution of Sb atoms for Bi atoms in the Bi2Se3 crystal lattice leads to
an increase in the omega(p) values, whereas in the range of higher Sb
content the omega(p) values decrease. This effect is accounted for by
a model of point defects in the crystal lattice of (Bi1-xSbx)(2)Se-3.
The dependence of the absorption coefficient K on the energy of incide
nt photons was determined from the transmittance spectra. The Position
of the short-wavelength absorption edge is discussed. with regard to
the long-wavelength absorption edge it was found that the values of al
pha in the relation K similar to lambda(alpha) lie in the interval 2.2
to 2.5, hence the dominant scattering mechanism of the free charge ca
rriers in (Bi1-xSbx)(2)Se-3 crystals at room temperature is the scatte
ring by acoustic phonons.