EFFECT OF LOW AND HIGH-TEMPERATURE ANNEALING ON THE ELECTRICAL-PROPERTIES OF PURE N2O SIH4 PECVD SIO2 DEPOSITED AT A HIGH-RATE/

Low and high temperature anneals have been performed on pure N2O/SIH4 PECVD SiO2, and their influence on the bulk and interface properties i s studied. The study reveals degradation of the interface with increas ing time and temperature of annealing beyond the first 10 to 40 min lo w-temperature anneal, as observed from the rising values of fixed oxid e charge density and interface trap level density. Bulk properties, su ch as leakage current at low fields and electron trapping, improve wit h annealing time and temperature due to densification and loss of Si-O H groups, but the primary breakdown strength also reduces simultaneous ly.