SHALLOW DONOR IMPACT IONIZATION IN N-INP AND N-GAAS - INFLUENCE OF DOPING AND COMPENSATION

Authors
KUNDROTAS J DARGYS A CESNA A
Citation
J. Kundrotas et al., SHALLOW DONOR IMPACT IONIZATION IN N-INP AND N-GAAS - INFLUENCE OF DOPING AND COMPENSATION, Semiconductor science and technology, 11(5), 1996, pp. 692-696
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
5
Year of publication
1996
Pages
692 - 696
Database
ISI
SICI code
0268-1242(1996)11:5<692:SDIIIN>2.0.ZU;2-I
Abstract
The donor impact-ionization coefficient is calculated using the Boltzm ann transport equation. It is shown that impact-ionizing collisions of free electrons with shallow donors induce strong cooling of the hot-e lectron distribution function. From the obtained results it is found t hat in the analysis of impurity breakdown or related processes the app roach based on phenomenological equations is valid only for small chan ges of electron concentration. Corresponding graphs for the impact-ion ization coefficient are presented for n-InP and n-GaAs.