ANNEALING OF RADIATION DEFECTS IN DUAL-IMPLANTED SILICON

Authors
KOZLOV IP ODZHAEV VB POPOK VN HNATOWICZ V
Citation
Ip. Kozlov et al., ANNEALING OF RADIATION DEFECTS IN DUAL-IMPLANTED SILICON, Semiconductor science and technology, 11(5), 1996, pp. 722-725
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
5
Year of publication
1996
Pages
722 - 725
Database
ISI
SICI code
0268-1242(1996)11:5<722:AORDID>2.0.ZU;2-M
Abstract
Silicon samples dual implanted with B+ + N+ and B+ + Ar+ ions and then furnace annealed at temperatures up to 900 degrees C were studied usi ng RBS and EPR. An anomalous decrease of defect concentration after su bsequent implantation with boron and nitrogen ions to the same dose (1 .2 x 10(15) cm(-2)) was observed due to radiation annealing. A transfo rmation of simple point defects to pentavacancies during annealing was found, which depends on the degree of silicon amorphization. The defe ct annealing temperature was found to be a function of the dose and io n species combination in the first and second implantations.