THE THEORY OF QUANTUM-DOT INFRARED PHOTOTRANSISTORS

Authors
RYZHII V
Citation
V. Ryzhii, THE THEORY OF QUANTUM-DOT INFRARED PHOTOTRANSISTORS, Semiconductor science and technology, 11(5), 1996, pp. 759-765
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
5
Year of publication
1996
Pages
759 - 765
Database
ISI
SICI code
0268-1242(1996)11:5<759:TTOQIP>2.0.ZU;2-B
Abstract
A novel device-the quantum-dot infrared phototransistor (QDIP)-is prop osed and considered theoretically. The QDIP utilizes intersubband elec tron transitions from the bound states. The dark current and sensitivi ty are calculated using a proposed analytical model of the QDIP. It is shown that the QDIP can exhibit low dark current, high photoelectric gain and sensitivity surpassing the characteristics of other intersubb and photodetectors.