APPLICATION OF LOW-DEFECT REACTIVE ION ETCHING IN CL-2-BCL3 PLASMA INCOMBINATION WITH OVERGROWTH FOR FORMATION OF GAAS ALGAAS SUBMICROMETER STRUCTURES/

Authors
TIMOFEEV FN GUREVICH SA SMIRNITSKII VB GLADYSHEVA LB YAVICH BS USIKOV A
Citation
Fn. Timofeev et al., APPLICATION OF LOW-DEFECT REACTIVE ION ETCHING IN CL-2-BCL3 PLASMA INCOMBINATION WITH OVERGROWTH FOR FORMATION OF GAAS ALGAAS SUBMICROMETER STRUCTURES/, Semiconductor science and technology, 11(5), 1996, pp. 797-800
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
5
Year of publication
1996
Pages
797 - 800
Database
ISI
SICI code
0268-1242(1996)11:5<797:AOLRIE>2.0.ZU;2-V
Abstract
Cl-2:BCl3 plasma has been applied for high-quality, low-defect anisotr opic reactive ion etching (RIE) of submicrometre scale elements in AlG aAs/GaAs heterostructures. Raman spectroscopy and photoluminescence (P L) study of the RIE-etched GaAs show no structural damage. AlGaAs/GaAs quantum well wire (QWW) structures with width 20-30 nm and period 250 nm were fabricated using RIE and structure preparation for overgrowth in one RIE chamber. After overgrowth by a 10-50 nm thick layer of AlG aAs (or GaAsP) QWW structures show the same PL intensity as initial un etched single quantum well structures.