Yc. Sun et al., MEASUREMENT OF SHEET RESISTANCE OF CROSS MICROAREAS USING A MODIFIED VAN DER PAUW METHOD, Semiconductor science and technology, 11(5), 1996, pp. 805-811
The sheet resistance of a cross microarea with a size as small as 120
mu m was determined by using a modified van der Pauw method, in which
the tip positions of four probes were controlled at the peripheral are
as outside a demarcation curve, as shown in the text, by direct inspec
tion through a microscope with a magnification of 4 x 20. It is not ne
cessary to prepare four metallized electrodes for setting probes. The
measurement results are independent of the wanderings of probes and it
is unnecessary to determine the precise positions of probes in order
to make corrections for the boundary effect. These conclusions have be
en proved in this paper by using the finite element method (FEM) and h
ave been confirmed by the experimental determination of sheet resistan
ce for several boron-doped cross microareas isolated by p-n junctions
on an n-type silicon wafer.