FORMATION OF PERIODIC NANOMETER STRUCTURES IN A DEFECT-STRAIN SYSTEM AND LASER-INDUCED AMORPHIZATION OF SEMICONDUCTORS

Authors
EMELYANOV VI
Citation
Vi. Emelyanov, FORMATION OF PERIODIC NANOMETER STRUCTURES IN A DEFECT-STRAIN SYSTEM AND LASER-INDUCED AMORPHIZATION OF SEMICONDUCTORS, Laser physics, 6(2), 1996, pp. 423-426
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Laser physics → ACNP
ISSN journal
1054660X
Volume
6
Issue
2
Year of publication
1996
Pages
423 - 426
Database
ISI
SICI code
1054-660X(1996)6:2<423:FOPNSI>2.0.ZU;2-0
Abstract
It is demonstrated that as the concentration of laser-induced defects (interstices and vacancies) becomes higher than a critical concentrati on, a crystal is split into nanometer domains separated by defect wall s. The results of this analysis are used to develop a model of laser-i nduced amorphization of crystals.