THE RELIEF OF PSEUDOMORPHIC STRAIN IN EPILAYERS OF FCC STRUCTURES GROWN IN (110) ORIENTATION

Authors
Citation
Dw. Pashley, THE RELIEF OF PSEUDOMORPHIC STRAIN IN EPILAYERS OF FCC STRUCTURES GROWN IN (110) ORIENTATION, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 67(6), 1993, pp. 1333-1346
Citations number
10
Categorie Soggetti
Physics, Applied
ISSN journal
01418610
Volume
67
Issue
6
Year of publication
1993
Pages
1333 - 1346
Database
ISI
SICI code
0141-8610(1993)67:6<1333:TROPSI>2.0.ZU;2-X
Abstract
The relief of pseudomorphic strain in (110) epitaxial epilayers of fc. c. structures is restricted by the orientation of the normal {111}[110 ] slip systems. Possible alternative relief mechanisms are discussed, and the consequences of the restriction are considered, especially in relation to the occurrence of anisotropic strain relief and one-dimens ional pseudomorphism. These aspects are related to the occurrence of l arge-angle tilts of epilayers as reported by Flynn, and it is conclude d that the tilts can be explained quantitatively in terms of misfit di slocations forming in (110) epilayers which exhibit one-dimensional ps eudomorphism resulting from anisotropic strain relief.