INTERSUBBAND DYNAMICS OF ASYMMETRIC QUANTUM-WELLS STUDIED BY THZ OPTICAL RECTIFICATION

Citation
K. Unterrainer et al., INTERSUBBAND DYNAMICS OF ASYMMETRIC QUANTUM-WELLS STUDIED BY THZ OPTICAL RECTIFICATION, Semiconductor science and technology, 11(11), 1996, pp. 1591-1595
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
11
Issue
11
Year of publication
1996
Supplement
S
Pages
1591 - 1595
Database
ISI
SICI code
0268-1242(1996)11:11<1591:IDOAQS>2.0.ZU;2-L
Abstract
We have measured the rectification of far-infrared radiation resonant with the lowest intersubband transition of an AlGaAs/GaAs asymmetric c oupled double-quantum well in which the subband spacing is 11 meV. Fro m these measurements we can extract an intersubband lifetime of 1.2 +/ - 0.4 ns at low excitation intensity and T = 10 K, which appears promi sing for devices such as FIR detectors or mixers which can operate at low excitation and temperature. In order to investigate the effect of carrier concentration on the relaxation time we have performed the sam e experiments in a logarithmically graded quantum well.