K. Unterrainer et al., INTERSUBBAND DYNAMICS OF ASYMMETRIC QUANTUM-WELLS STUDIED BY THZ OPTICAL RECTIFICATION, Semiconductor science and technology, 11(11), 1996, pp. 1591-1595
We have measured the rectification of far-infrared radiation resonant
with the lowest intersubband transition of an AlGaAs/GaAs asymmetric c
oupled double-quantum well in which the subband spacing is 11 meV. Fro
m these measurements we can extract an intersubband lifetime of 1.2 +/
- 0.4 ns at low excitation intensity and T = 10 K, which appears promi
sing for devices such as FIR detectors or mixers which can operate at
low excitation and temperature. In order to investigate the effect of
carrier concentration on the relaxation time we have performed the sam
e experiments in a logarithmically graded quantum well.