USE OF ION LAYERING TECHNIQUE IN THE SYNT HESIS OF TL2O3-CENTER-DOT-NH(2)O NANOLAYERS ON SILICON SURFACE

Authors
TOLSTOI VP
Citation
Vp. Tolstoi, USE OF ION LAYERING TECHNIQUE IN THE SYNT HESIS OF TL2O3-CENTER-DOT-NH(2)O NANOLAYERS ON SILICON SURFACE, Zurnal neorganiceskoj himii, 40(2), 1995, pp. 220-222
Citations number
6
Categorie Soggetti
Chemistry Inorganic & Nuclear
Journal title
Zurnal neorganiceskoj himii → ACNP
ISSN journal
0044457X
Volume
40
Issue
2
Year of publication
1995
Pages
220 - 222
Database
ISI
SICI code
0044-457X(1995)40:2<220:UOILTI>2.0.ZU;2-8