Zx. Jiang et al., EFFECT OF DONOR IMPURITIES ON FAR-INFRARED MAGNETOSPECTROSCOPY OF ELECTRONS IN QUASI-2-DIMENSIONAL SYSTEMS, Semiconductor science and technology, 11(11), 1996, pp. 1608-1612
Results of recent far-infrared magnetospectroscopic studies of a serie
s of GaAs/AlGaAs multiple-quantum-well samples with Si donors S-doped
both in the 20 nm well centres (2 x 10(10) cm(-2)) and in the 60 nm ba
rrier centres ((3.5-28) x 10(10) cm(-2)) are described. In the presenc
e of excess electrons a strong singlet transition of the D- ions is ob
served, and one of the two predicted triplet transitions has been iden
tified. At higher electron densities these transitions evolve continuo
usly into blue-shifted singlet-like and triplet-like bound magnetoplas
mon transitions. For the two highest-density samples the singlet-like
transition exhibits clear discontinuous changes in slope versus field
at integral Landau level filling factors (FFs). Plots of the differenc
e in energy between the many-electron singlet-like transition and the
D- singlet transition normalized by the high-field Coulomb energy vers
us FF, exhibit cusp-like behaviour at FFs 1 and 2 at 4.2 K for the hig
hest density sample, and at 1 and 4/3 at 1.7 K for the lower density s
ample. The results at integral FFs are compared with recent theoretica
l calculations. These experiments indicate that controlled doping of a
random array of donor ions can be used to probe the nature of many-el
ectron states in confined systems.