CONDUCTION AND VALENCE-BAND EDGES OF POROUS SILICON DETERMINED BY ELECTRON-TRANSFER

Authors
REHM JM MCLENDON GL FAUCHET PM
Citation
Jm. Rehm et al., CONDUCTION AND VALENCE-BAND EDGES OF POROUS SILICON DETERMINED BY ELECTRON-TRANSFER, Journal of the American Chemical Society, 118(18), 1996, pp. 4490-4491
Citations number
19
Categorie Soggetti
Chemistry
Journal title
Journal of the American Chemical Society → ACNP
ISSN journal
00027863
Volume
118
Issue
18
Year of publication
1996
Pages
4490 - 4491
Database
ISI
SICI code
0002-7863(1996)118:18<4490:CAVEOP>2.0.ZU;2-B