INTRINSIC AND EXTRINSIC PROCESSES IN PHOTOLUMINESCENCE, REFLECTIVITY,AND SPIN DYNAMICS OF GAAS QUANTUM-WELLS

Citation
V. Srinivas et al., INTRINSIC AND EXTRINSIC PROCESSES IN PHOTOLUMINESCENCE, REFLECTIVITY,AND SPIN DYNAMICS OF GAAS QUANTUM-WELLS, Journal of the Optical Society of America. B, Optical physics, 13(5), 1996, pp. 989-993
Citations number
29
Categorie Soggetti
Optics
ISSN journal
07403224
Volume
13
Issue
5
Year of publication
1996
Pages
989 - 993
Database
ISI
SICI code
0740-3224(1996)13:5<989:IAEPIP>2.0.ZU;2-E
Abstract
The intrinsic optical properties of two-dimensional excitons in quantu m wells include rapid radiative recombination, fast electron-spin rela xation, and high-reflectivity modulation. The sample-to-sample variati ons in the observed properties are shown to be due to phonon, defect, and impurity scattering processes. We identify the various components of the photoluminescence and reflectivity line shapes through extensiv e optical measurements on a series of GaAs quantum-well samples. We pr esent experimental evidence that demonstrates that the optical reflect ivity and the time-resolved-polarized luminescence data may be used as very sensitive probes of the intrinsic and the extrinsic processes. ( C) 1996 Optical Society of America.