TRANSFORMER COUPLED PLASMA-ETCHING FOR FPD MANUFACTURING

Citation
Ah. Shih et al., TRANSFORMER COUPLED PLASMA-ETCHING FOR FPD MANUFACTURING, Solid state technology, 39(5), 1996, pp. 71
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
39
Issue
5
Year of publication
1996
Database
ISI
SICI code
0038-111X(1996)39:5<71:TCPFFM>2.0.ZU;2-L
Abstract
Improved dry etch processes are required for volume manufacturing of a dvanced flat panel displays (FPDs). Current processes, both wet and dr y, have difficulties producing acceptable cross-panel uniformity, pane l-to-panel uniformity, and sidewall profiles. A planar inductively cou pled plasma system has been developed that yields excellent, reproduci ble etch processes. Initial process development of amorphous silicon, silicon nitride, and indium tin oxide etches on a small R&D system sca led well to a full-size production tool. Electrical tests show that th e plasma source does not cause damage in thin-film transistor (TFT) fa brication.