Improved dry etch processes are required for volume manufacturing of a
dvanced flat panel displays (FPDs). Current processes, both wet and dr
y, have difficulties producing acceptable cross-panel uniformity, pane
l-to-panel uniformity, and sidewall profiles. A planar inductively cou
pled plasma system has been developed that yields excellent, reproduci
ble etch processes. Initial process development of amorphous silicon,
silicon nitride, and indium tin oxide etches on a small R&D system sca
led well to a full-size production tool. Electrical tests show that th
e plasma source does not cause damage in thin-film transistor (TFT) fa
brication.