Chemical vapor deposition (CVD) is playing an increasingly important r
ole in semiconductor fabrication because it can provide high throughpu
t and excellent step coverage. As new CVD processes are developed to d
eposit different materials, they must meet demanding requirements for
process control, deposition area, particle generation, reliability, co
st control, and safety standards. New compounds (gases, liquids, or so
lids), with diverse physical and chemical properties, are finding use
as precursors for CVD processes. Therefore, selecting an appropriate d
elivery mechanism for the materials has become a critical issue in CVD
process development. This article reviews the selection criteria, com
pares some available delivery systems, and provides some examples of h
ow specific methods were chosen.