VAPOR DELIVERY METHODS FOR CVD - AN EQUIPMENT SELECTION GUIDE

Authors
Citation
La. Sullivan et B. Han, VAPOR DELIVERY METHODS FOR CVD - AN EQUIPMENT SELECTION GUIDE, Solid state technology, 39(5), 1996, pp. 91
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
39
Issue
5
Year of publication
1996
Database
ISI
SICI code
0038-111X(1996)39:5<91:VDMFC->2.0.ZU;2-B
Abstract
Chemical vapor deposition (CVD) is playing an increasingly important r ole in semiconductor fabrication because it can provide high throughpu t and excellent step coverage. As new CVD processes are developed to d eposit different materials, they must meet demanding requirements for process control, deposition area, particle generation, reliability, co st control, and safety standards. New compounds (gases, liquids, or so lids), with diverse physical and chemical properties, are finding use as precursors for CVD processes. Therefore, selecting an appropriate d elivery mechanism for the materials has become a critical issue in CVD process development. This article reviews the selection criteria, com pares some available delivery systems, and provides some examples of h ow specific methods were chosen.