A STRAINED INALAS INGAAS SUPERLATTICE AVALANCHE PHOTODIODE WITH A WAVE-GUIDE STRUCTURE FOR LOW BIAS-VOLTAGE OPERATION/

An InAIAs/lnGaAs superlattice (SL) multiplication layer operating at a n IC-power supply voltage was realized by introducing strain into the SL. Using this SL as an absorption and multiplication layer, edge-coup led InAIAs/lnGaAs SF avalanche photodiodes with waveguide structures w ere demonstrated. An avalanche multiplication factor larger than 10 wa s achieved at a bias voltage of less than 7 V. A wide 3 dB bandwidth o f 8 GHz was obtained at a multiplication factor of 3 and a wavelength of 1.3 mu m.