S. Hanatani et al., A STRAINED INALAS INGAAS SUPERLATTICE AVALANCHE PHOTODIODE WITH A WAVE-GUIDE STRUCTURE FOR LOW BIAS-VOLTAGE OPERATION/, Optical and quantum electronics, 28(5), 1996, pp. 575-581
An InAIAs/lnGaAs superlattice (SL) multiplication layer operating at a
n IC-power supply voltage was realized by introducing strain into the
SL. Using this SL as an absorption and multiplication layer, edge-coup
led InAIAs/lnGaAs SF avalanche photodiodes with waveguide structures w
ere demonstrated. An avalanche multiplication factor larger than 10 wa
s achieved at a bias voltage of less than 7 V. A wide 3 dB bandwidth o
f 8 GHz was obtained at a multiplication factor of 3 and a wavelength
of 1.3 mu m.