TEMPERATURE-DEPENDENCE AND INPUT OPTICAL POWER TOLERANCE OF AN INGAASP ELECTROABSORPTION MODULATOR MODULE

We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stabil ity of the module was found to be very high. The optimum Delta E(g) at 20 degrees C has been estimated to be 48-55 meV. At Delta E(g) of 53 meV, the insertion loss was almost independent of the temperature, whi le the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input po wer for breakdown was smaller for higher bias voltage or smaller Delta E(g). Allowable maximum input optical power has a large margin (>5 dB ) for the conventional input level in practical systems.