H. Tanaka et al., TEMPERATURE-DEPENDENCE AND INPUT OPTICAL POWER TOLERANCE OF AN INGAASP ELECTROABSORPTION MODULATOR MODULE, Optical and quantum electronics, 28(5), 1996, pp. 605-612
We report the temperature dependence and input optical power tolerance
of an InGaAsP electroabsorption (EA) modulator module. Thermal stabil
ity of the module was found to be very high. The optimum Delta E(g) at
20 degrees C has been estimated to be 48-55 meV. At Delta E(g) of 53
meV, the insertion loss was almost independent of the temperature, whi
le the driving voltage was strongly dependent on the temperature. The
breakdown phenomena were investigated in detail; these occurred under
conditions of very high input power and/or high bias voltage. Input po
wer for breakdown was smaller for higher bias voltage or smaller Delta
E(g). Allowable maximum input optical power has a large margin (>5 dB
) for the conventional input level in practical systems.